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NewsTopic · ResonacMaterial3 min readDisconfirmAI Editorial

Japanese Materials Company Resonac Develops 300mm Silicon Carbide Substrates, Not to Sell Large Wafers

A development lead at Japanese materials company Resonac explained that the core objective of developing 300mm silicon carbide (SiC) single-crystal substrates is to overcome the extreme difficulties of growing large-diameter crystals and feed those insights back into improving the quality of existing 150mm and 200mm products, rather than preparing for the commercialization of 300mm wafers. The interview also revealed the real-world constraints on transitioning SiC substrates from current sizes to larger diameters: the equipment environments of device manufacturers, cost thresholds for substrates, and the scale of end-user demand.

2026-11-04 19:00 GMT+8

The silicon carbide (SiC) power semiconductor industry is currently undergoing a transition from 150mm to 200mm substrates. According to a development lead at Japanese materials company Resonac, 200mm products are expected to become mainstream around 2030, with a full transition to 300mm occurring only after that. Against this backdrop, Resonac announced in September 2026 that it had successfully grown and processed a 300mm-diameter SiC single-crystal substrate, making its first public display at the International Conference on Silicon Carbide and Related Materials (ICSCRM 2026) held in Yokohama later that same month. On the surface, this appears to be preparation for next-generation mass production. However, the development lead's answer was unexpected: there are no plans to sell 300mm SiC epitaxial wafers; the purpose of the development is purely to enhance the competitiveness of existing 150mm and 200mm products.

This logic rests on a specific materials science fact. During SiC single-crystal growth, the larger the diameter, the more difficult it becomes to control conditions such as temperature distribution during crystallization. Resonac's strategy is to proactively tackle these control challenges by attempting the most difficult condition—the 300mm size—and then feeding back the resulting expertise, such as thermal field design, into smaller-diameter products already in mass production. In other words, the 300mm substrate here is not a product itself, but a yardstick—a tool used to calibrate the company's process limits at more practical, smaller sizes.

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Resonac offers a similar interpretation of competitors' 300mm displays. Chinese manufacturer SICC and American company Wolfspeed have recently both announced 300mm SiC development results, which outsiders might easily interpret as early positioning for a mass-production race. However, Resonac believes these displays do not necessarily point toward early mass production; they may similarly serve to demonstrate large-diameter capabilities to bolster confidence in the quality of their smaller-size products. Of course, this is Resonac's assessment; the actual business plans of each company remain undisclosed.

What truly determines when the SiC substrate transitions from 200mm to 300mm is not whether substrate makers can produce samples, but the equipment environment at device manufacturers. Resonac cited a historical precedent to illustrate this logic: according to the company, the current push toward 200mm SiC substrates is linked to the fact that silicon (Si) semiconductor manufacturing has completed its transition to 300mm, freeing up a significant amount of 200mm-compatible production lines. While Si and SiC do not use identical equipment entirely, some evaluation devices can be shared, creating conditions for device makers to lower the switching costs associated with adopting 200mm SiC. Similarly, the transition to 300mm SiC requires device makers to be willing to allocate 300mm production line resources to SiC. This depends on whether demand for SiC devices in end markets such as AI data centers and electric vehicles grows sufficiently to justify such allocation.

Cost represents another threshold. The core advantage of larger diameters is that a single wafer yields more chips, thereby spreading out costs. However, if the selling price of 300mm substrates or the equipment modification investments required by device makers are too high, total costs may not decrease. Resonac explicitly stated that for 300mm to become a viable product, it must reach a price level that device makers are willing to adopt. Currently, this price point has not yet been established.

This interview deconstructs a narrative often oversimplified as 'larger wafer size means mass production is imminent.' In reality, while substrate makers producing 300mm samples is a necessary condition, it is not sufficient. Device makers' willingness to adapt their equipment, the cost-competitiveness of the substrates, and the scale growth of end-market demand are all indispensable. Resonac itself indicated that the commercialization of 300mm will depend on proactive demand from customer device makers, rather than being driven unilaterally by substrate manufacturers.

Sources

  • eetimes.itmedia.co.jpEE Times Japan↗
Topic

Resonac

日本半导体材料巨头Resonac(力森诺科)宣布成功开发直径300mm碳化硅(SiC)单晶基板,成为日本首家实现该尺寸突破的企业。尽管业界普遍关注大尺寸晶圆带来的成本优势,但Resonac明确表示,此次研发的核心目的并非立即商业化300mm…

4 steps1 piecesUpdated 2026-11-04 11:08

How it got here

  1. 2024-09-24Resonac与法国Soitec签署协议,共同开发用于SiC功率半导体的200mm键合基板,旨在提高8英寸晶圆生产效率并多元化供应链。eu.resonac.com ↗
  2. 2026-09-15Resonac发布新闻稿,宣布成功生长并加工出300mm SiC单晶基板,称其为下一代电子材料的重要技术里程碑。resonac.com ↗
  3. 2026-09-27在International Conference on Silicon Carbide and Related Materials (ICSCRM) 2026会议上,Resonac首次公开展示其开发的300mm SiC单晶基板。eetimes.itmedia.co.jp ↗

What is still unsettled

  • SiC器件制造商何时具备大规模采用300mm生产线的设备兼容性与投资意愿?
  • 随着AI数据中心和电动汽车需求增长,300mm SiC基板的成本阈值将在何时达到商业可行点?
  • Resonac如何将300mm研发中获得的晶体生长控制技术具体转化为现有200mm产品的良率提升数据?
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