Infineon Plans ~€1.1B Austria GaN Fab, Says It Will Be World's First 300mm Mass-Production Line
Infineon plans a ~€1.1B Austria fab it says will be the world's first 300mm GaN mass-production line, targeting end-2027 production.
German chipmaker Infineon Technologies announced on October 27, 2026, that it will establish a mass-production facility for gallium nitride (GaN) power semiconductors using 300mm wafers at its site in Villach, Austria. Infineon says this will be the world's first facility of its kind. The project involves an investment of approximately €1.1 billion through 2034, with production targeted to begin by the end of 2027.
According to Infineon, transitioning from 200mm to 300mm wafers increases the number of chips obtained per wafer by 2.3 times, reducing manufacturing costs and improving efficiency. GaN power semiconductors, which enable high-efficiency power conversion, are seeing growing demand in AI data centers, energy infrastructure, electric mobility and robotics.
The project has received approval for €319 million in state aid from the European Commission under the European Chips Act, with the Austrian government's formal subsidy decision expected to follow. Infineon CEO Jochen Hanebeck stated that the company will become the first to achieve large-scale production of 300mm GaN.