Qualcomm extends its 3D-stacked memory technology from data center to devices
HBC was previously tied only to data center chips; extending it to edge devices is a directional statement with no product or timeline yet.
ImportanceLocalEvidenceE2 unreplicatedWrite-upQuick
Qualcomm CEO Cristiano Amon announced at Snapdragon Summit on September 22 that HBC, its 3D-stacked near-memory computing technology, will no longer be limited to the data center and will also come to end devices.
HBC stacks compute dies beneath LPDDR DRAM dies and had previously been announced only for the AI250 and AI300 data center AI chips. Extending it to devices targets the memory bandwidth constraint in on-device AI.
This is an executive statement as relayed by Zhidongxi from the event; Qualcomm gave no device product or shipping timeline, so it remains a vendor claim rather than an available capability.